IEC 62047-45:2025

Semiconductor devices - Micro-electromechanical devices - Part 45: Silicon based MEMS fabrication technology - Measurement method of impact resistance of nanostructures

IEC 62047-45:2025 specifies the requirements and testing method to measure the impact resistance of nanostructures which are fabricated by micromachining technology used in silicon-based micro-electromechanical system (MEMS).
This document is applicable to the in-situ impact resistance measurement of nanostructures manufactured by microelectronic technology process and other micromachining technology.
In the production of MEMS devices, due to the micro/nano size, the non-ideal effect of fabrication is greatly amplified compared with the macroscale. Surface defects, line width loss, and residual stress can occur in the fabricated object, resulting in severe fluctuations in the mechanical strength of MEMS devices. This document specifies an in-situ measurement method for the impact resistance of nanostructures based on MEMS technology to extract the impact strength of actual manufactured structures. This test method does not need intricated instruments (such as scanning probe microscopy and nanoindenter) and special test specimens.
Since the in-situ on-chip tester in this document can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabrication part can give some quantitative reference for the design part.

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